Arsine Source Replacement for the Growth of Gallium Arsenide via MOCVD. 1993.
TURI Technical Report No. 8. This feasibilty study involves the systematic evaluation of arsenic containing reagents that could potentially replace arsine gas from the process and manufacturing of microwave semiconductor diodes. The reagent would act as an input substitution in the Semiconductor Materials Laboratory at the Burlington Facility of M/A-COM.File Name: techreport8.pdf
File Size: 635.29 kB
Note: This file can be opened with Adobe Acrobat Reader